SEMICONDUCTOR DEVICE AND PROCESS FOR FABRICATING THE SAME

摘要

Following to formation of an interlayer insulating film (14) covering a ferroelectric capacitor, a hydrogen diffusion preventive film (18), an etching stopper (19) and an interlayer insulating film (20) are formed. Interconnect lines having a TaN film (21) (a barrier metal film) and a Cu film (22) are then formed in the interlayer insulating film (20) by a single damascene method. Subsequently, interconnect lines having a Cu film (29) and interconnect lines having a Cu film (36) are formed by a dual damascene method.