| 发明名称 |
FUSE REGIONS IN A SEMICONDUCTOR MEMORY DEVICE AND METHODS OF FABRICATING THE SAME |
| 摘要 |
A device and method of manufacturing a fuse region are disclosed. The fuse region may include an interlayer insulating layer formed on a substrate, a plurality of fuses disposed on the interlayer insulating layer, and fuse isolation walls located between the fuses, wherein each of the fuse isolation walls may include lower and upper fuse isolation patterns. |
| 申请公布号 |
KR20050102710(A) |
申请公布日期 |
2005.10.27 |
| 申请号 |
KR20040027486 |
申请日期 |
2004.04.21 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PANG, KWANG KYU;LEE, KUN GU;LYU, KYOUNG SUK;BANG, JEONG HO;SHIN, KYEONG SEON;CHOI, HO JEONG;CHOI, SEUNG GYOO |
| 分类号 |
H01L21/82;G11C17/16;H01L21/4763;H01L21/768;H01L21/8246;H01L23/525;H01L27/112;H01L29/40;(IPC1-7):H01L21/82 |
主分类号 |
H01L21/82 |
| 代理机构 |
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