| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, having through holes arranged in a matrix form connected to the respective cells and formed by photolithography and etching, by which the dimensional variances in the diameters of the through holes in the outer peripheral cell region and in the internal cell region of a mat comprising the cells can be decreased. <P>SOLUTION: The mask dimensions, corresponding to through holes 1a, 1b, 1c in a photomask M10 to be used for photolithography, are designed, in such a manner that a mat comprising cells 10mn is divided into an outer peripheral region and an inner cell region and that the mask dimensions, corresponding to the through holes 1b, 1c in the outer peripheral cell region, are larger than the mask dimensions corresponding to the through hole 1a in the inner cell region. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
