| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device with decreased dislocation density and high light emitting efficiency. <P>SOLUTION: The underlining layer 13 constituting the semiconductor light emitting device is constituted from Al containing nitride semiconductor, and formed by, for example, MOCVD at a temperature above 1100°C from the beginning of its growth. Next, an n-type conductive layer 14, a light emitting layer 15, a p-type cladding layer 16, and a p-type conductive layer 17 are constituted from such a nitride semiconductor layer that contains less Al content than that of underlying layer 13. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
