| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a tunnel magnetoresistive element obtained by sequentially forming films such as a lower electrode layer, a pinned layer, a tunnel barrier layer, a free layer and an upper electrode layer on a substrate, wherein the tunnel barrier layer which can ensure a good covering property with a small film thickness as possible. <P>SOLUTION: The tunnel magnetic resistance effect element 1 is obtained by sequentially laminating a lower electrode layer 20, a pinned layer 30, a tunnel barrier layer 40, a free layer 50, and an upper electrode layer 60 on a substrate 10. The tunnel barrier layer 40 is composed of alumina with films being formed by an atomic layer growing method, and even if a film thickness is set thin, it is possible to increase a covering property for unevenness existing on the surface of the underlaying pinned layer 30, and to reduce variations of the film thickness of the tunnel barrier layer 40. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
