发明名称 |
MEMORY DEVICE WITH DIELECTRIC MULTILAYER AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>In a memory device including a dielectric multilayer structure, and a method of fabricating the same, the memory device includes a semiconductor substrate, a first impurity region and a second impurity region spaced apart from each other in the semiconductor substrate, and a gate structure formed on the semiconductor substrate and contacting the first impurity region and the second impurity region, the gate structure including a tunneling oxide layer on the semiconductor substrate, a charge storage layer on the tunneling oxide layer, an insulating layer on the charge storage layer, the insulating layer including at least two dielectric layers, and a gate electrode layer on the insulating layer.</p> |
申请公布号 |
KR20050102864(A) |
申请公布日期 |
2005.10.27 |
申请号 |
KR20040028165 |
申请日期 |
2004.04.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEON, SANG HUN;KIM, CHUNG WOO;HWANG, HYUN SANG |
分类号 |
H01L21/8247;G11C16/04;H01L21/28;H01L27/10;H01L27/115;H01L29/51;H01L29/76;H01L29/788;H01L29/792;(IPC1-7):H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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