发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem that it is necessary to input an address at a host system side during write address and status checking because the output of an n-bit status shift register for storing the execution state during write erasure is outputted only to the lower 8 bits of a data bus in a nonvolatile semiconductor memory device in which an input data bus and an output data bus are different in width. SOLUTION: This device is provided with a switching circuit for repeating the outputting of data from an n-bit shift register storing an executing state during writing or erasing for each n bit, and switching the data with data from a sense amplifier for reading data from a memory array to output it to the output data bus. Thus, a host system is capable of checking status data without executing any address conversion. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005302134(A) 申请公布日期 2005.10.27
申请号 JP20040115884 申请日期 2004.04.09
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SUWA HITOSHI;TOMITA YASUHIRO;KOMIYA MANABU
分类号 G11C16/06;G11C7/00;G11C11/34;G11C16/10;(IPC1-7):G11C16/06 主分类号 G11C16/06
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