| 摘要 |
A method of manufacturing a semiconductor device comprising a dual gate field effect transistor is disclosed, in which method a semiconductor body with a surface and of silicon is provided with a source region and a drain region of a first conductivity type and with a channel region of a second conductivity type, opposite to the first conductivity type, between the source region and the drain region and with a first gate region separated from the channel region by a first gate dielectric and situated on one side of the channel region and with a second gate region separated from the channel region by a second gate dielectric and situated on an opposite side of the channel region, and wherein both gate regions are formed within a trench formed in the semiconductor body.
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