APPARATUS FOR CONTROLLING GAS FLOW IN A SEMICONDUCTOR SUBSTRATE PROCESSING CHAMBER
摘要
Apparatus for controlling the flow of a gas between a process region and an exhaust port in a semiconductor substrate processing chamber is provided. The apparatus includes at least one restrictor plate supported within the semiconductor processing chamber and at least partially circumscribing a substrate support pedestal. The restrictor plate is adapted to control the flow of at least one gas flowing between the process region and the exhaust port.
申请公布号
WO2005101461(A1)
申请公布日期
2005.10.27
申请号
WO2005US11309
申请日期
2005.04.01
申请人
APPLIED MATERIALS, INC.;BERA, KALLOL;CHAE, HEEYEOP;TAVASSOLI, HAMID;YE, YAN
发明人
BERA, KALLOL;CHAE, HEEYEOP;TAVASSOLI, HAMID;YE, YAN