| 摘要 |
PROBLEM TO BE SOLVED: To prevent generation of a fixed pattern noise through improvement of linearity of signal output under low luminance condition by adjusting potential of carrier pocket. SOLUTION: The solid-state imaging apparatus comprises a photoelectric converting element PD, and a transistor TM formed adjacent to the photoelectric converting element. This solid-state imaging apparatus further comprises a substrate 1 of one conductivity type, a first diffusing layer 21 of the opposite conductivity type formed on the substrate, a second diffusing layer 4 of one conductivity type formed on the first diffusing layer of the photoelectric converting element forming region, a third diffusing layer 5 of one conductivity type formed continuously with the second diffusing layer, a gate electrode 6, a source 7, a drain 8, the first region 10 formed at the lower part of gate electrode within the third diffusing layer in the concentration higher than that of the third diffusing layer, and the fourth diffusing layers 10, 10' including the second region 10' in the concentration lower than that of the first region. COPYRIGHT: (C)2006,JPO&NCIPI
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