发明名称 |
Active matrix substrate for display device and its manufacture method |
摘要 |
An active matrix substrate has: scanning lines extending in row direction and image data lines extending in column direction, formed in display area; semiconductor islands at each cross point and in peripheral circuit area; a first gate insulating film formed on each pixel semiconductor island; a first gate made of a first wiring layer and formed on said first gate insulating film; a second gate insulating film thinner than the first gate insulating film formed on peripheral circuit semiconductor island; and a second gate electrode made of a second wiring layer and formed on the second gate insulating film, wherein the pixel transistor semiconductor island, first gate insulating film and first gate electrode constitute a pixel transistor, and the scanning line includes a lower layer made of the second wiring line and an upper layer made of the first wiring line connected to the lower layer.
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申请公布号 |
US2005237441(A1) |
申请公布日期 |
2005.10.27 |
申请号 |
US20040985814 |
申请日期 |
2004.11.10 |
申请人 |
FUJITSU DISPLAY TECHNOLOGIES CORPORATION |
发明人 |
HOTTA KAZUSHIGE;WATANABE TAKUYA;OHASHI NORIYUKI |
分类号 |
G02F1/136;G02F1/1362;G02F1/1368;G09F9/30;H01L29/786;H01L51/50;H05B33/14;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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