发明名称 Active matrix substrate for display device and its manufacture method
摘要 An active matrix substrate has: scanning lines extending in row direction and image data lines extending in column direction, formed in display area; semiconductor islands at each cross point and in peripheral circuit area; a first gate insulating film formed on each pixel semiconductor island; a first gate made of a first wiring layer and formed on said first gate insulating film; a second gate insulating film thinner than the first gate insulating film formed on peripheral circuit semiconductor island; and a second gate electrode made of a second wiring layer and formed on the second gate insulating film, wherein the pixel transistor semiconductor island, first gate insulating film and first gate electrode constitute a pixel transistor, and the scanning line includes a lower layer made of the second wiring line and an upper layer made of the first wiring line connected to the lower layer.
申请公布号 US2005237441(A1) 申请公布日期 2005.10.27
申请号 US20040985814 申请日期 2004.11.10
申请人 FUJITSU DISPLAY TECHNOLOGIES CORPORATION 发明人 HOTTA KAZUSHIGE;WATANABE TAKUYA;OHASHI NORIYUKI
分类号 G02F1/136;G02F1/1362;G02F1/1368;G09F9/30;H01L29/786;H01L51/50;H05B33/14;(IPC1-7):G02F1/136 主分类号 G02F1/136
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