| 发明名称 |
Use of C2F6 gas to gain vertical profile in high dosage implanted poly film |
| 摘要 |
A method of etching a polysilicon layer comprising the following steps. A polysilicon layer is formed over a structure and the polysilicon layer is etched using at least a C<SUB>2</SUB>F<SUB>6 </SUB>etching process to form an etched polysilicon layer having a vertical profile.
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| 申请公布号 |
US2005236366(A1) |
申请公布日期 |
2005.10.27 |
| 申请号 |
US20040833178 |
申请日期 |
2004.04.27 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO. |
发明人 |
LIU KUO-CHIN |
| 分类号 |
B44C1/22;H01L21/302;(IPC1-7):H01L21/302 |
主分类号 |
B44C1/22 |
| 代理机构 |
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