Nonvolatile semiconductor memory and method of operating the same

摘要

A nonvolatile semiconductor memory having a memory cell comprises: a semiconductor substrate having a pair of trenches formed on a surface thereof; first electrodes formed in a pair of trenches through the intervention of a first insulating film, respectively; a second electrode formed on the semiconductor substrate between the trenches through the intervention of a second insulating film; and a third electrode formed on the second electrode through the intervention of a third insulating film.