发明名称 |
Bi-directional read/program non-volatile floating gate memory cell and array thereof, and method of formation |
摘要 |
A bi-directional read/program non-volatile memory cell and array is capable of achieving high density. Each memory cell has two spaced floating gates for storage of charges thereon. The cell has spaced apart source/drain regions with a channel therebetween, with the channel having three portions. One of the floating gate is over a first portion; another floating gate is over a second portion, and a gate electrode controls the conduction of the channel in the third portion between the first and second portions. A control gate is connected to each of the source/drain regions, and is also capacitively coupled to the floating gate. The cell programs by hot channel electron injection, and erases by Fowler-Nordheim tunneling of electrons from the floating gate to the gate electrode. Bi-directional read permits the cell to be programmed to store bits, with one bit in each floating gate.
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申请公布号 |
US2005237807(A1) |
申请公布日期 |
2005.10.27 |
申请号 |
US20050111244 |
申请日期 |
2005.04.20 |
申请人 |
CHEN BOMY;FRAYER JACK;LEE DANA |
发明人 |
CHEN BOMY;FRAYER JACK;LEE DANA |
分类号 |
G11C16/04;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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