发明名称 |
Methods for producing ruthenium film and ruthenium oxide film |
摘要 |
To provide a method that can relatively rapidly deposit a ruthenium film that adheres well to substrate and that also does not incorporate impurities. Method for producing ruthenium film, characterized by reacting a gaseous volatile inorganic ruthenium compound with a gaseous reducing agent by introducing the gaseous volatile inorganic ruthenium compound and gaseous reducing agent into a reaction chamber ( 11 ) that holds at least one substrate and thereby depositing ruthenium on the at least one substrate.
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申请公布号 |
US2005238808(A1) |
申请公布日期 |
2005.10.27 |
申请号 |
US20050112470 |
申请日期 |
2005.04.22 |
申请人 |
L'AIR LIQUIDE, SOCIETE ANONYME A DIRECTOIRE ET CONSEIL DE SURVEILLANCE POUR I'ETUDE ET I'EXPLOITA |
发明人 |
GATINEAU JULIEN;DUSSARRAT CHRISTIAN |
分类号 |
C23C16/14;C23C16/06;C23C16/40;C23C16/44;C23C16/455;H01L21/02;H01L21/28;H01L21/285;H01L21/8242;H01L27/108;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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