发明名称 Methods for producing ruthenium film and ruthenium oxide film
摘要 To provide a method that can relatively rapidly deposit a ruthenium film that adheres well to substrate and that also does not incorporate impurities. Method for producing ruthenium film, characterized by reacting a gaseous volatile inorganic ruthenium compound with a gaseous reducing agent by introducing the gaseous volatile inorganic ruthenium compound and gaseous reducing agent into a reaction chamber ( 11 ) that holds at least one substrate and thereby depositing ruthenium on the at least one substrate.
申请公布号 US2005238808(A1) 申请公布日期 2005.10.27
申请号 US20050112470 申请日期 2005.04.22
申请人 L'AIR LIQUIDE, SOCIETE ANONYME A DIRECTOIRE ET CONSEIL DE SURVEILLANCE POUR I'ETUDE ET I'EXPLOITA 发明人 GATINEAU JULIEN;DUSSARRAT CHRISTIAN
分类号 C23C16/14;C23C16/06;C23C16/40;C23C16/44;C23C16/455;H01L21/02;H01L21/28;H01L21/285;H01L21/8242;H01L27/108;(IPC1-7):C23C16/00 主分类号 C23C16/14
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