MANUFACTURING METHOD OF FLASH MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a flash memory which is reduced in the amount of an organic gaseous substance in an environmental atmosphere and capable of manufacturing a quantum dot having a size and/or density within an optimum range, in the manufacturing method the a flash memory which forms the quantum dot on the insulating film of a semiconductor substrate as a floating gate. SOLUTION: The manufacturing method of the flash memory retains the environmental atmosphere of the semiconductor substrate before forming the quantum dot clean by an organic gaseous substance removing means, in the manufacturing method of the flash memory which forms an insulating film on the semiconductor substrate and forms the quantum dot on the insulating film as the floating gate. COPYRIGHT: (C)2006,JPO&NCIPI