| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser which is prevented from deteriorating high power characteristics such as kink generation caused by spatial hole burning and gain saturation, constituted so that reflectivities of two end faces forming a resonator may be made unsymmetrical in order to obtain high power. SOLUTION: In a semiconductor laser with unsymmetrical end face reflectivity, an optical confinement coefficient to an active layer 104 of a ridge stripe structure 117 lower part at the front end side 141 of the resonator emitting a laser beam is made smaller than the optical confinement coefficient to the active layer 104 of the ridge stripe structure 117 lower part at the side of a rear end side 140 located at the opposite side. Thus, imbalance between a light intensity distribution in the longitudinal direction of the resonator and an injection carrier density distribution can be reduced by the unsymmetrical end face reflectivity, so that the semiconductor laser may be prevented from deteriorating the high power characteristics. COPYRIGHT: (C)2006,JPO&NCIPI
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