| 摘要 |
PROBLEM TO BE SOLVED: To make leakage magnetic field small from a magnetization fixed layer without making the magnetization fixed layer into lamination ferrimagnetic structure. SOLUTION: The magnetoresistive effect element comprises an antiferromagnetism layer 52; a magnetization fixed layer 53, where the magnetization is fixed in a predetermined direction by the switched connections magnetic field which works in-between with the antiferromagnetism layer 52; a free magnetization layer 55 whose magnetizing direction changes according to an external magnetic field; a spin valve film 50 constituted so as to laminate a nonmagnetic layer 54 which isolates magnetically between a magnetization fixed layer 53 and a free magnetization layers 55; permanent magnet films 57a, 57b for impressing a longitudinal bias magnetic field to the free magnetization layer 55 of the spin valve film 50; and electrode layers 58a, 58b for supplying sense current to the spin valve film 50. The size Lp in the height longitudinal direction of the antiferromagnetism layer 52 and the magnetization fixed layer 53 consisting of the spin valve film 50 is made larger than the size Lf in the height longitudinal direction of the free magnetization layer 55. COPYRIGHT: (C)2006,JPO&NCIPI
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