| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a MOS type solid-state imaging device, wherein a step of a method for its manufacturing is made common to that of an ordinary MOS logic, and a manufacturing step is shortened and the number of masks is reduced. SOLUTION: A photosensitive area including photodiodes and transistors in pixels and a timing circuit for supplying voltage pulse to the photosensitive area are formed. All of MOS transistors 100b are set to n-type MOS transistors, and a gate 103 and a source/drain 106 formed of an n-type impurity area are arranged and formed in a p well 102 as a p-type impurity area. Then a p-type impurity area 109 is formed inside the p well to make contact; and a p-type impurity area 108, an n-type impurity area 104, and a p-type impurity area 102 are arranged in order in a photodiode 100a from the front surface of a semiconductor substrate to the rear surface thereof. An injection step for forming an impurity area of the n-type MOS transistor and that for forming an impurity area of the photodiode are partly executed at the same time. COPYRIGHT: (C)2006,JPO&NCIPI
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