发明名称 APPARATUS AND METHOD FOR MANUFACTURING THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a thin-film manufacturing apparatus that has a simplified structure, and prevents the radiation of a catalyst to a substrate and does not give influence on film formation even if the catalyst varies in temperature, and to provide a thin-film manufacturing method. SOLUTION: A catalyst housing container provided with a reactant gas supply system and a reaction chamber provided with a material gas supply system and an inert gas supply system are provided independently, and they are connected with each other by means of a valve. When a reactant gas is not introduced to the reaction chamber, the valve is shut off to block the radiation of the heated catalyst to the substrate. Thus, even if the catalyst varies in temperature, thin films can be manufactured without being given any influence on film formation. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005302822(A) 申请公布日期 2005.10.27
申请号 JP20040113111 申请日期 2004.04.07
申请人 ULVAC JAPAN LTD 发明人 YAMADA KIICHI;KANEDA TETSUYA;IRINO OSAMU
分类号 C23C16/44;H01L21/205;(IPC1-7):H01L21/205 主分类号 C23C16/44
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