| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a ferroelectric device having a large amount of polarization and good fatigue characteristics. SOLUTION: The semiconductor device includes a semiconductor substrate and a ferroelectric layer 3 provided on the semiconductor substrate and sandwiched between a lower electrode 1 and an upper electrode 5. The lower electrode includes a strontium ruthenate film 2 having the thickness of≤2 nm. COPYRIGHT: (C)2006,JPO&NCIPI
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