| 摘要 |
PROBLEM TO BE SOLVED: To improve the processing accuracy and the stability of processing performance with respect to a pattern formed by processing on a semiconductor wafer. SOLUTION: In a processing chamber 1, light polarized at a prescribed angle with respect to a pattern processed on the wafer 5 is incident into the pattern through an incident section 10, and then light polarized at a prescribed angle which is reflected by the pattern is detected by a detector 11. Based on the light detected by the detector 11, the shape and dimensions of the pattern are measured by a measuring section 12. COPYRIGHT: (C)2006,JPO&NCIPI
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