发明名称 METHOD AND DEVICE FOR FINE PROCESSING
摘要 PROBLEM TO BE SOLVED: To provide a method and a device for fine processing to produce a thin film work with high processing precision. SOLUTION: This fine processing method includes a repetitive process to repeat irradiating an ion beam 16 by using a scanning microscope so as to make it reach the inside of a work 6 after applying spatter-etching to the work 6 by irradiating an ion beam 12, and obtaining the image of a reference part set in advance at a location deeper than the reference surface in the inside of the work 6. In this repetitive process, the succeeding ion beam 12 is irradiated at an output smaller than that of the preceding ion beam 12, and the succeeding electron beam 16 is irradiated at an acceleration voltage smaller than that of the preceding electron beam 16. The repetitive process is carried out until the acceleration voltage falls to a reference acceleration voltage. The reference acceleration voltage is the minimum value whereby the electron beam 16 can advance into the inside of the work 6 by the distance from the reference surface up to the reference part. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005302600(A) 申请公布日期 2005.10.27
申请号 JP20040118998 申请日期 2004.04.14
申请人 SEIKO EPSON CORP 发明人 INUI MITSUTAKA
分类号 G01N23/225;B23K15/00;H01J37/317;(IPC1-7):H01J37/317 主分类号 G01N23/225
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