| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to allow an n-type quaternary guide layer which is provided directly under the n side of the activity layer of a mesa portion, to be thinner, and to make it possible to improve breakdown voltage by making it possible to allow pn block thickness to be sufficiently thick, in other words, to make it possible to set independently the degree of the local existence of light in the n side and composition wavelength (= a refractive index), relating to a semiconductor light emitting device. SOLUTION: A semiconductor light emitting device comprises an n-type InP substrate 1, a mesa structure comprising an n-type quaternary light guide layer 2 extending in an axis direction on the substrate 1, an activity layer 3 extending on the light guide layer 2, a p-type cladding layer 6 formed on the activity layer 3, a p-side electrode 9 connected with the p-side cladding layer 6 and an n-side electrode 10 connected with the substrate 1, and a p-type quaternary embedding layer 12 allowing both sides of the mesa structure to be embedded in the layer. The refractive index of the light guide layer 2 is large in comparison with that of the substrate 1. The refractive index of the p-type quaternary embedding layer 12 for allowing the mesa side surface of the light guide layer 2 to be embedded in the layer is large in comparison with that of the substrate 1. COPYRIGHT: (C)2006,JPO&NCIPI
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