发明名称 Planarization process for thin film surfaces
摘要 A method is provided for planarization of structures which minimizes step heights, reduces process steps, improves cleanliness, and provides increased ease of debond. Structures are placed with working surfaces facing down onto an adhesive layer such that structures remain fixed during heating. A bi-layer encapsulating film is used to achieve planarization. A carrier is bi-laminated with a thermoplastic film layer followed by a chemically inert protective polymer film layer that can withstand etch and cleaning processes. The thermoplastic layer is laminated on top of the carrier; the polymer layer is laminated on top of the joined thermoplastic layer and carrier. The carrier with bi-layer film is then placed onto the backside of the structures to resist chemical attack from the front side during photostrip and enable planarization. When heat is applied, the bi-layer encapsulating film melts and pushes the polymer layer into the gaps between structures thereby achieving complete planarization.
申请公布号 US2005235485(A1) 申请公布日期 2005.10.27
申请号 US20050168215 申请日期 2005.06.27
申请人 DAI QING;LU JENNIFER Q;MCKEAN DENNIS R;ROW EUN;ZHENG LI 发明人 DAI QING;LU JENNIFER Q.;MCKEAN DENNIS R.;ROW EUN;ZHENG LI
分类号 G11B5/10;G11B5/31;G11B5/60;H04R31/00;(IPC1-7):G11B5/147 主分类号 G11B5/10
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