发明名称 THIN FILM DEPOSITION SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a thin film deposition system and a thin film deposition method which enables a uniform supply of material gas by rapidly purging residual gas in a gas dispersion chamber and attaining high productivity. SOLUTION: A gas supply device so configured as to be coupled to a reaction chamber for gas exhausting includes a gas dispersion head for introducing gas into the chamber through the head surface. The gas dispersion head includes a first section for exhausting gas toward the susceptor direction through the head surface and a second section for exhausting gas toward the susceptor direction through the head surface. The first and second sections are separated from each other in the gas dispersion head and at least one of the sections is coupled to a gas exhaust system for purging gas present in the corresponding second section without passing through the head surface. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005303292(A) 申请公布日期 2005.10.27
申请号 JP20050105786 申请日期 2005.04.01
申请人 ASM JAPAN KK 发明人 JINRIKI HIROSHI;ARAMI JIYUNICHI
分类号 C23C16/455;C23C16/00;C23C16/34;C23C16/44;C23C16/505;H01L21/31;(IPC1-7):H01L21/31 主分类号 C23C16/455
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