发明名称
摘要 PROBLEM TO BE SOLVED: To provide a photovoltaic element having a high photoelectric conversion efficiency at a low cost. SOLUTION: In the photovoltaic element having a first transparent conductive layer 103 on a support substrate 101, a semiconductor layer having an n-, i- and p-type semiconductor layer laminated in this order thereon as an nip type, and second transparent conductive layer 108 formed thereon, the n-type semiconductor layer of the nip-type laminated semiconductor layer is composed of an amorphous semiconductor layer 104 and microcrystal semiconductor layer 105 having a microcrystal volume ratio of 3-75% and the i-type semiconductor layer is formed from a microcrystal layer.
申请公布号 JP3710311(B2) 申请公布日期 2005.10.26
申请号 JP19990012570 申请日期 1999.01.21
申请人 发明人
分类号 H01L31/04 主分类号 H01L31/04
代理机构 代理人
主权项
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