UV-blocking layer for reducing UV-induced charging of sonos dual-bit flash memory devices in beol processing

摘要

A method of protecting a SONOS flash memory cell (24) from UV-induced charging, including fabricating a SONOS flash memory cell (24) in a semiconductor device (10, 50); and depositing over the SONOS flash memory cell (24) at least one UV-protective layer (38, 46, 48 or 52), the UV-protective layer including a substantially UV-opaque material. A SONOS flash memory device (10, 50), including a SONOS flash memory cell (24); and at least one UV-protective layer (38, 46, 48 or 52), in which the fly-protective layer comprises a substantially UV-opaque material, is provided.