发明名称 |
SEMICONDUCTOR PRESSURE SENSOR AND PROCESS FOR FABRICATING THE SAME |
摘要 |
<p>This invention aims to realize reduction in size without impairing measurement accuracy or connection reliability in a semiconductor pressure sensor in which a glass substrate is adhered to a rear-surface side of a pressure-sensitive chip in which piezoresistive pressure-sensitive gauges have been formed on a front surface of a diaphragm formed of a silicon single crystal to form a space between a rear surface of the diaphragm and the glass substrate, for measuring a pressure applied to the front surface of the diaphragm with reference to a pressure of the first space as a standard pressure. In order to achieve this object, the semiconductor pressure sensor includes resinous projections formed on pressure-sensitive gauge electrodes disposed on a front surface of the pressure-sensitive chip or on wiring from the pressure-sensitive gauge electrodes and bumps formed so as to partially or entirely cover the resinous projections. <IMAGE></p> |
申请公布号 |
EP1589329(A1) |
申请公布日期 |
2005.10.26 |
申请号 |
EP20040706349 |
申请日期 |
2004.01.29 |
申请人 |
FUJIKURA LTD. |
发明人 |
SATO, MASAKAZU;ITO, TATSUYA;NOGUCHI, HIDETO |
分类号 |
G01L9/00;G01L13/02;H01L29/84;(IPC1-7):G01L9/00 |
主分类号 |
G01L9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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