Process of making an integrated circuit comprising shallow trench isolation and corresponding integrated circuit

摘要

The procedure includes formation of hollow insulating grooves (2) inside a substrate (1) and the creation of active components (5) in and on the active zones between the grooves. The grooves are formed in an initial phase before the active components are made, and are filled with germanium or a silicon-germanium alloy. After the active components have been formed and encapsulated, an access is made through the encapsulating material through which the filling can be removed and the opening plugged.