SOI STRUCTURE COMPRISING SUBSTRATE CONTACTS ON BOTH SIDES OF THE BOX, AND METHOD FOR THE PRODUCTION OF SUCH A STRUCTURE

摘要

Disclosed are an arrangement and a production method for electrically connecting ( 20 ) active semiconductor structures ( 40 ) in the monocrystalline silicon layer ( 12 ) located on the front face of silicon-on-insulator semiconductor wafers (SOI; 10 ) to the substrate ( 13 ) located on the rear side and additional structures ( 13 a) that are disposed therein. The electric connection is made through the insulator layer ( 11 ).