| 摘要 |
<p>The present invention comprises a method for forming a hardmask including the steps of depositing a polymeric preceramic precursor film atop a substrate; converting the polymeric preceramic precursor film into at least one ceramic layer, where the ceramic layer has a composition of SivNWCXOyHZ where 0.1<= v<= 0.9, 0<= w< 0.5, 0.05<= x<= 0.9, 0<= y<= 0.5, 0.05<= z<= 0.8 for v+w+x+y+z=l; forming a patterned photoresist atop the ceramic layer; patterning the ceramic layer to expose regions of the underlying substrate, where a remaining region of the underlying substrate is protected by the patterned ceramic layer; and etching the exposed region of the underlying substrate. Another aspect of the present invention is a buried etch stop layer having a composition of SivNWCXOyH Z where 0.05<v<0.8, 0<w<0.9, 0.05<x<0.8, 0<y< 0.8, 0.05<z<0.8 for v+w+x+y+z=1.</p> |
