发明名称 |
Semiconductor device having low resistivity source and drain electrodes |
摘要 |
A dummy gate crossing an active area having ends in contact with an isolation area is formed. A low area lower than a dummy gate is formed in the isolation area. Side walls are formed in the active area except the dummy gate. A semiconductor film having the same height as that of the dummy gate is formed in the low area. An oxide film is formed on the semiconductor film. The dummy gate is removed by the oxide film as a mask. The oxide film is removed by the semiconductor film as a stopper.
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申请公布号 |
US6958500(B2) |
申请公布日期 |
2005.10.25 |
申请号 |
US20030683280 |
申请日期 |
2003.10.14 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAITO TOMOHIRO |
分类号 |
H01L21/28;H01L21/336;H01L29/423;H01L29/49;H01L29/51;H01L29/78;H01L29/786;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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