发明名称 Method and apparatus for the improvement of material/voltage contrast
摘要 A method and system for registering a CAD layout to a Focused Ion Beam image for through-the substrate probing, without using an optical image and without requiring biasing, includes an improved method of trench endpointing during the FIB milling operation with a low beam energy. The method further includes removal of Ga at the trench floor using XeF<SUB>2</SUB>, as well as the deposition of an insulating layer onto the trench floor.
申请公布号 US6958248(B1) 申请公布日期 2005.10.25
申请号 US20040789336 申请日期 2004.02.27
申请人 发明人
分类号 G01R31/26;H01J37/305;H01L21/316;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01R31/26
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