| 发明名称 |
Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides |
| 摘要 |
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include organo-amine ligands and one or more precursor compounds that include organo-oxide ligands.
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| 申请公布号 |
US6958300(B2) |
申请公布日期 |
2005.10.25 |
| 申请号 |
US20020229627 |
申请日期 |
2002.08.28 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
VAARTSTRA BRIAN A.;WESTMORELAND DONALD L. |
| 分类号 |
C23C16/40;C23C16/44;C23C16/455;H01L21/316;H01L21/822;H01L21/8242;H01L21/8244;H01L21/8246;H01L27/04;H01L27/105;H01L27/108;H01L27/11;H01L29/78;(IPC1-7):H01L21/31 |
主分类号 |
C23C16/40 |
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