发明名称 Integrated circuit including active components and at least one passive component associated fabrication method
摘要 There is provided an integrated circuit having active components including junctions formed in a monocrystalline substrate doped locally, and at least one passive component situated above the active components. The integrated circuit includes a first insulating layer separating the active components and abase of the passive component, and a metal terminal for electrically connecting the passive component with at least one of the active components. The metal terminal is formed in the thickness of the first insulating layer and has a contact surface that projects from the limits of a junction of the one active component. In a preferred embodiment, the passive component is a capacitor. Also provided is a method of fabricating an integrated circuit that includes MOS transistors and an onboard memory plane of DRAM cells in a matrix.
申请公布号 US6958505(B2) 申请公布日期 2005.10.25
申请号 US20010955926 申请日期 2001.09.18
申请人 STMICROELECTRONICS S.A. 发明人 MALLARDEAU CATHERINE;MAZOYER PASCALE;PIAZZA MARC
分类号 H01L21/28;H01L21/3205;H01L21/768;H01L21/8242;H01L23/52;H01L27/108;(IPC1-7):H01L27/108 主分类号 H01L21/28
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