发明名称 Semiconductor integrated circuit device and method of manufacturing the same
摘要 A semiconductor integrated circuit device includes a cell transistor; a bit line provided above the cell transistor; a magnetoresistive element provided above the bit line, a first end portion of the magnetoresistive element being electrically connected to the bit line; an intracell local interconnection provided above the magnetoresistive element, the intracell local interconnection coupling one of source and drain regions of the cell transistor to a second end portion of the magnetoresistive element; and a write word line provided above the intracell local interconnection, a portion between the write word line and the intracell local interconnection being filled with an insulator alone.
申请公布号 US6958932(B2) 申请公布日期 2005.10.25
申请号 US20020199176 申请日期 2002.07.22
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HOSOTANI KEIJI;ASAO YOSHIAKI;SAITO YOSHIAKI;AMANO MINORU;TAKAHASHI SHIGEKI;KISHI TATSUYA;IWATA YOSHIHISA
分类号 H01L27/105;H01L21/768;H01L21/8246;H01L27/22;H01L43/08;(IPC1-7):G11C17/14 主分类号 H01L27/105
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