发明名称 |
Electronic structures with reduced capacitance |
摘要 |
An apparatus and method is described incorporating one or more layers of SiCOH and one or more layers of patterned conductors in an integrated circuit chip. The invention overcomes the problem of capacitance by lowering the k of the delectric and overcomes the problem of breakdown voltage and the leakage curent by tailoring the composition of SiCOH.
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申请公布号 |
US6958526(B2) |
申请公布日期 |
2005.10.25 |
申请号 |
US20040766249 |
申请日期 |
2004.01.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GATES STEPHEN MCCONNELL;GRILL ALFRED |
分类号 |
H01F17/00;H01F27/34;H01L27/08;(IPC1-7):H01L21/476;H01L23/48;H01L23/58;H01L29/00 |
主分类号 |
H01F17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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