| 摘要 |
<p>The present invention discloses a NAND type flash memory device and a method for manufacturing the same which can prevent patterns from being collapsed or thinly defined due to irregularity, by forming word lines or source and drain select lines in regular patterns, by electrically connecting floating gates and control gates of the select lines, by forming a dielectric layer and a polysilicon layer for protection on the whole surface of a semiconductor substrate on which a polysilicon layer for floating gates has been formed, partially removing the dielectric layer on the polysilicon layer which will be the source and drain select lines, and forming a polysilicon layer for control gates and a silicide layer.</p> |
