| 摘要 |
A wide bandwidth mixer has a low temperature co-fired ceramic substrate. The substrate has a top layer, a bottom layer and inner layers. Vias extend through the substrate. A local oscillator balun and an RF balun are located on the inner layers and connected to the vias. An intermediate frequency balun is mounted to the top layer and connected to the vias. Field effect transistors are mounted on the top layer and connected to the local oscillator balun, the RF balun and the intermediate frequency balun through the vias. A matching network is mounted to the top layer and is connected to the vias. The matching network matches the impedance of the field effect transistors to that at the LO port.
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