发明名称 |
Method for producing large area antireflective microtextured surfaces |
摘要 |
A method employing a photolithography mask for producing microtextured antireflective surfaces is disclosed. The photolithography mask is used during the exposure of photoresist to a pattern of ultraviolet light. The exposed photoresist is subsequently processed to obtain a microtextured surface possessing antireflective properties. The antireflective surface profile comprises an array of sub-micron protuberances that may reside in a periodic arrangement, a quasiperiodic arrangement, or in an arbitrary non-periodic arrangement. The antireflective surface is designed for visible light. It may be scaled-up to large areas, and is suitable for replication into inexpensive polymer materials.
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申请公布号 |
US6958207(B1) |
申请公布日期 |
2005.10.25 |
申请号 |
US20020314031 |
申请日期 |
2002.12.07 |
申请人 |
KHUSNATDINOV NIYAZ;CHANG TANWIN |
发明人 |
KHUSNATDINOV NIYAZ;CHANG TANWIN |
分类号 |
G02B1/11;G02B5/00;G02B5/02;G03F1/00;G03F7/00;G03F7/20;(IPC1-7):G02B5/00 |
主分类号 |
G02B1/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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