发明名称 Method for producing large area antireflective microtextured surfaces
摘要 A method employing a photolithography mask for producing microtextured antireflective surfaces is disclosed. The photolithography mask is used during the exposure of photoresist to a pattern of ultraviolet light. The exposed photoresist is subsequently processed to obtain a microtextured surface possessing antireflective properties. The antireflective surface profile comprises an array of sub-micron protuberances that may reside in a periodic arrangement, a quasiperiodic arrangement, or in an arbitrary non-periodic arrangement. The antireflective surface is designed for visible light. It may be scaled-up to large areas, and is suitable for replication into inexpensive polymer materials.
申请公布号 US6958207(B1) 申请公布日期 2005.10.25
申请号 US20020314031 申请日期 2002.12.07
申请人 KHUSNATDINOV NIYAZ;CHANG TANWIN 发明人 KHUSNATDINOV NIYAZ;CHANG TANWIN
分类号 G02B1/11;G02B5/00;G02B5/02;G03F1/00;G03F7/00;G03F7/20;(IPC1-7):G02B5/00 主分类号 G02B1/11
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