| 摘要 |
The invention provides a method for manufacturing a semiconductor device by which product performance and working efficiency can be improved while increasing a capacitor area of cross-point FeRAM. By using a first mask formed on a lower electrode layer forming film, a lower electrode is formed and processed and the lower electrode 2 A can be exposed on a first insulating layer. By using a second mask formed on an upper electrode supporting layer forming film, a ferroelectric layer and an upper electrode supporting layer can be formed and processed and the upper electrode supporting layer can be exposed on a second insulating layer.
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