FLASH MEMORY CELL HAVING A DUAL GATE INSULATOR AND METHOD OF FORMING THE SAME,申请号KR20040026747-传众专利搜索

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发明名称	FLASH MEMORY CELL HAVING A DUAL GATE INSULATOR AND METHOD OF FORMING THE SAME
摘要
申请公布号	KR20050101668(A)	申请公布日期	2005.10.25
申请号	KR20040026747	申请日期	2004.04.19
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	LEE, CHOONG HO;PARK, DONG GUN;CHOI, JUNG DAL;YOON, JAE MAN;KIM, TAE TONG
分类号	H01L27/115;(IPC1-7):H01L27/115	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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