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发明名称
Fabricating method of CMOS image sensor having reduced dark current with nitride layer and hydrogen annealing
摘要
申请公布号
KR100523668(B1)
申请公布日期
2005.10.24
申请号
KR20020086449
申请日期
2002.12.30
申请人
发明人
分类号
H01L27/146;(IPC1-7):H01L27/146
主分类号
H01L27/146
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