| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device capable of simultaneously performing both a decrease in resistance of source and drain areas and a decrease in gate leak current. SOLUTION: A heatsink film 15 is formed on a gate insulating film 14, and heat treatment is performed on the insulating film 14 by radiating a blaze 23 onto a silicon substrate 1 from the heatsink film 15. The heatsink film 15 can be a silicon film, and a metal silicide film may be formed on the gate insulating film 14 by forming a metallic film on the silicon film after the heat treatment to convert the film into a silicide. In this case, it is preferable that the thickness of the silicon film is 30 nm or thicker and the silicon film is further formed of amorphous one. COPYRIGHT: (C)2006,JPO&NCIPI
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