III-V compound semiconductor crystals

摘要

III-V Compound semiconductor crystals characterized by containing Al and In as main constituent elements of group III, and also containing a constituent element of group V, and characterized in that the carbon concentration in the compound semiconductor crystals is 1x10¹⁶ cm^-3 or higher, and the oxygen concentration therein is 1x10¹⁸ cm^-3 or lower and is not higher than the carbon concentration; and a method for producing the III-V compound semiconductor crystals. By using the III-V compound semiconductor crystals, a semiconductor device showing satisfactory electric conductivity characteristics, and a semiconductor laser showing satisfactory high speed modulation characteristics can be provided.