发明名称 Method for using asymmetric OPC structures on line ends of semiconductor pattern layers
摘要 A method is disclosed for conducting optical proximity correction (OPC) on at least two features in a circuit design. After detecting a first feature having at least one end thereof to be in the proximity of one end of a second feature, a first OPC pattern is incorporated to the end of the first feature toward a first direction; and a second OPC pattern is incorporated to the end of the second feature toward a second direction that is substantially opposite from the first direction.
申请公布号 US2005233223(A1) 申请公布日期 2005.10.20
申请号 US20040823822 申请日期 2004.04.15
申请人 LIAW JHON J 发明人 LIAW JHON J.
分类号 G03C5/00;G03F1/14;G03F7/00;G03F9/00;H01L21/027;H01L21/66;(IPC1-7):G03C5/00 主分类号 G03C5/00
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