| 发明名称 |
METHODS FOR MANUFACTURING A FINFET USING A CONVENTIONAL WAFER AND APPARATUS MANUFACTURED THEREFROM |
| 摘要 |
A method is provided for producing a fin structure on a semiconductor substrate using a thin SiGe layer to produce a void between a silicon substrate and a silicon fin portion. A fin structure produced by such a method is also provided.
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| 申请公布号 |
US2005233565(A1) |
申请公布日期 |
2005.10.20 |
| 申请号 |
US20040709129 |
申请日期 |
2004.04.15 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHU HUILONG;DORIS BRUCE B. |
| 分类号 |
H01L21/3205;H01L21/336;H01L29/786;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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