发明名称 |
Method of forming sidewall spacers |
摘要 |
The present invention allows the formation of sidewall spacers adjacent a feature on a substrate without there being an undesirable erosion of the feature. The feature is covered by one or more protective layers. A layer of a spacer material is deposited over the feature and etched anisotropically. An etchant used in the anisotropic etching is adapted to selectively remove the spacer material, whereas the one or more protective layers are substantially not affected by the etchant. Thus, the one or more protective layers protect the feature from being exposed to the etchant.
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申请公布号 |
US2005233532(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20050039084 |
申请日期 |
2005.01.19 |
申请人 |
LENSKI MARKUS;GRAETSCH FALK;REICHEL CARSTEN;SCHWAN CHRISTOPH;BIERSTEDT HELMUT;KAMMLER THORSTEN;MAZUR MARTIN |
发明人 |
LENSKI MARKUS;GRAETSCH FALK;REICHEL CARSTEN;SCHWAN CHRISTOPH;BIERSTEDT HELMUT;KAMMLER THORSTEN;MAZUR MARTIN |
分类号 |
H01L21/311;H01L21/3213;H01L21/336;H01L21/337;H01L29/45;H01L29/74;H01L29/78;H01L31/111;(IPC1-7):H01L29/45 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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