| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a minute semiconductor device having a low leakage current and no pattern dependency. SOLUTION: An amorphous layer 101 is formed in a region extending from the surface of a silicon substrate 100 to a first depth A. Thereupon, a defect 103 happens in the vicinity of the amorphous and a crystal interface 102. Then, the crystal structure of the amorphous layer 101 is recovered with a heat treatment for a region from the first depth A up to a second depth B shallower than the first depth A. Consequently, a region from the surface of the silicon substrate 100 up to the second depth B becomes the amorphous layer 101. Thereupon, the defect 103 is left behind at the first depth A. Thereafter, a pn junction 104 is formed at a third depth C shallower than the second depth B by ion implantation. COPYRIGHT: (C)2006,JPO&NCIPI
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